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| MICROWAVE CORPORATION v01.0300 HMC223MS8 GaAs MMIC T/R SWITCH 4.5 - 6.0 GHz Features Industry First Low Cost 4.5 - 6 GHz Switch Ultra Small Package: MSOP8 High Input P1dB: +33 dBm Single Positive Supply: +3 to +8V Typical Applications The HMC223MS8 is ideal for: * MMDS & WirelessLAN * Portable Wireless * UNII & HiperLAN * Wireless Local Loop Functional Diagram General Description The HMC223MS8 is a low-cost SPDT switch in an 8-lead MSOP package for use in transmit-receive applications. The device can control signals from 4.5 to 6 GHz and is especially suited for 5.2 GHz UNII and 5.8 GHz ISM applications with only 1.2 dB loss. The design provides exceptional power handling performance; input P1dB = +33dBm at 5 Volt bias. RF1 and RF2 are reflective shorts when "Off". Onchip circuitry allows single positive supply operation at very low DC current with control inputs compatible with CMOS and most TTL logic families. No DC blocking capacitors are required on RF I/O ports. 7 SWITCHES - SMT Electrical Specifications, TA = +25 C, Vdd = +5 Vdc, 50 Ohm System Parameter Frequency 4.5 - 6.0 GHz 5.1 - 5.4 GHz 5.4 - 5.9 GHz 4.5 - 6.0 GHz 5.1 - 5.4 GHz 5.4 - 5.9 GHz RF Common Return Loss RF1 & RF2 4.5 - 6.0 GHz 5.1 - 5.9 GHz 4.5 - 6.0 GHz 5.1 - 5.9 GHz 4.5 - 6.0 GHz 4.5 - 6.0 GHz 4.5 - 6.0 GHz 4.5 - 6.0 GHz 4.5 - 6.0 GHz 10 25 ns ns 15 22 16 10 11 10 12 27 29 30 32 Min. Typ. 1.2 1.2 1.3 25 26 20 13 15 13 16 31 33 34 36 Max. 1.7 1.6 1.7 Units dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm Inser tion Loss Isolation Input Power for 1dB Compression 0/3V Control 0/5V Control 0/3V Control 0/5V Control Input Third Order Intercept Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 7 - 94 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com MICROWAVE CORPORATION v01.0300 HMC223MS8 GaAs MMIC T/R SWITCH 4.5 - 6.0 GHz Insertion Loss 0 -0.5 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 -3.5 -4 3 4 5 FREQUENCY (GHz) 6 7 Isolation 0 -10 ISOLATION (dB) -20 -30 -40 3 4 5 FREQUENCY (GHz) 6 7 Return Loss 0 -5 RETURN LOSS (dB) S22 -10 -15 -20 -25 S11 RFC -30 3 4 5 FREQUENCY (GHz) 6 7 7 SWITCHES - SMT 7 - 95 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com MICROWAVE CORPORATION v01.0300 HMC223MS8 GaAs MMIC T/R SWITCH 4.5 - 6.0 GHz Truth Table *Control Input Voltage Tolerances are 0.2 Vdc. Bias Vdd (Vdc) 3 3 3 5 5 5 Control Input* A (Vdc) 0 0 Vdd 0 0 Vdd B (Vdc) 0 Vdd 0 0 Vdd 0 Bias Current ldd (uA) 10 10 10 45 45 45 Control Current la (uA) -5 -10 0 -22 -5 -40 Control Current lb (uA) -5 0 -10 -23 -40 -5 Signal Path State RF to RF1 OFF ON OFF OFF ON OFF RF to RF2 OFF OFF ON OFF OFF ON Absolute Maximum Ratings Bias Voltage Range (Vdd) Control Voltage Range (A & B) Storage Temperature Operating Temperature -0.2 to +12 Vdc -0.2 to Vdd Vdc -65 to +150 deg C -40 to +85 deg C Caution: Do not operate in 1dB compression at power levels above +33 dBm and do not "hot switch" power levels greater than +23 dBm (Vdd = +5Vdc). DC blocks are not required at ports RFC, RF1 and RF2. 7 SWITCHES - SMT Outline Drawing 1. MATERIAL A. PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC, SILICA & SILICONE IMPREGNATED B. LEADFRAME MATERIAL: COPPER ALLOY 2. PLATING: LEAD-TIN SOLDER PLATE 3. DIMENSIONS ARE IN INCHES (MILLIMETERS) 7 - 96 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com MICROWAVE CORPORATION v01.0300 HMC223MS8 GaAs MMIC T/R SWITCH 4.5 - 6.0 GHz Typical Application Circuit RF2 RF1 GND GND +V R1 A B Vdd +V R2 R3 CTL CMOS CMOS RF 7 SWITCHES - SMT 7 - 97 Notes: 1. Control Inputs A and B can be driven directly with CMOS logic (HC) with V of 3 to 8 Volts applied to the CMOS logic gates and to pin 4 of the RF switch. 2. Set V to 5 Volts and use HCT series logic to provide a TTL driver interface. 3. Highest RF signal power capability is achieved with V set to +10V. However, the switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. 4. RF ByPass: Do not use RF bypass capacitors on Vdd, A or B ports. Resistors R1, R2, R3 = 100 Ohms should be placed close to the Vdd, A and B ports. Use resistor size 0402 to minimize parasitic inductances and capacitances. 5. DC Blocking capacitors are not required for each RF port. 6. Evaluation PCB available. See Section 8 for Layout Guidelines Application Note. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com |
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